Isgaadhsiinta xawaaraha sare leh ee isku xidhan ee is haysta ee silikoon ku salaysan optoelectronic IQ modulator

Optoelectronic ku salaysan silikoon is haystaIQ modulatorisgaarsiin isku xiran oo xawaare sare leh
Baahida sii kordheysa ee heerka gudbinta xogta sare iyo transceivers tamar hufan oo badan ee xarumaha xogta ayaa horseeday horumarinta waxqabadka sare ee is haysta.modulators indhaha. Silicon-ku salaysan tignoolajiyada optoelectronic (SiPh) waxay noqotay madal rajo leh oo lagu dhex geliyo qaybaha kala duwan ee sawir-qaadista hal jajab, taasoo awood u siinaysa xalal is haysta oo kharash-ku-ool ah. Maqaalkani waxa uu sahamin doonaa sidaha cusub ee la xakameeyey modulator silicon IQ oo ku salaysan GeSi EAMs, kaas oo ku shaqayn kara inta jeer ee ilaa 75 Gbaud.
Naqshadaynta aaladda iyo sifooyinka
IQ modulator-ka la soo jeediyay wuxuu qaadanayaa qaab dhismeed saddex cudud oo cufan, sida ku cad sawirka 1 (a). Ka kooban saddex GeSi EAM iyo saddex waji-beerayaal heerkulbeeg ah, oo qaadanaya qaabayn summaysan. Iftiinka wax gelinta waxa lagu lamaanaa chip-ka iyada oo loo sii marayo lammaane-sharafeedka (GC) oo si siman loo qaybiyaa saddex waddo iyada oo loo marayo 1×3 multimode interferometer (MMI). Ka dib marka la dhex maro modulator-ka iyo wareejinta wejiga, iftiinka waxaa lagu daraa 1 × 3 MMI kale ka dibna waxaa lagu daraa fiber hal-mode ah (SSMF).

Jaantuska 1: (a) Sawirka yar ee modulator-ka IQ; (b) - (d) EO S21, heerka baabi'inta spectrum, iyo gudbinta hal GeSi EAM; (e) Jaantuska jaantuska modulator-ka IQ iyo wejiga indhaha ee u dhigma ee beddelka wejiga; (f) Matelida xakamaynta qaadaha ee diyaaradda kakan. Sida ku cad Jaantuska 1 (b), GeSi EAM waxa uu leeyahay baladhdhid koronto-optic oo ballaadhan. Jaantuska 1 (b) waxa uu cabbiray halbeegyada S21 ee hal qaab-dhismeedka tijaabada GeSi EAM iyada oo la adeegsanayo 67 GHz falanqeeye qaybaha indhaha (LCA). Jaantusyada 1 (c) iyo 1 (d) siday u kala horreeyaan waxay muujinayaan muuqaalka dabargoynta taagan (ER) ee danabyada kala duwan ee DC iyo gudbinta mawjadda dhererka 1555 nanometer.
Sida ku cad Jaantuska 1 (e), muuqaalka ugu muhiimsan ee naqshadani waa awooda lagu xakameynayo sidayaasha indhaha iyadoo la hagaajinayo wareegga isku dhafan ee gacanta dhexe. Farqiga wejiga ee u dhexeeya cududaha sare iyo kan hoose waa π/2, oo loo isticmaalo hagaajinta adag, halka faraqa u dhexeeya cududda dhexe uu yahay -3 π/4. Qaabayntani waxay u oggolaanaysaa faragelin burburin ah sidaha, sida lagu muujiyey diyaaradda kakan ee Jaantuska 1 (f).
Habaynta tijaabada iyo natiijooyinka
Habaynta tijaabada xawaaraha sare leh ayaa lagu muujiyay sawirka 2 (a). Koronto dhaliyaha waveform-ka (Keysight M8194A) ayaa loo istcimaalaa isha ishaarada, iyo laba weji oo 60 GHz ah oo ku haboon RF amplifiers (oo leh eex isku dhafan) ayaa loo istcimaalaa darawalada modulators. Korantada eexda ee GeSi EAM waa -2.5 V, iyo weji ku habboon fiilada RF ayaa loo isticmaalaa si loo yareeyo ismaandhaafka wejiga korantada ee u dhexeeya kanaalada I iyo Q.
Jaantus 2: (a) Habaynta tijaabada xawaaraha sare, (b) Xakamaynta sidaha 70 Gbaud, (c) Heerka khaladka iyo heerka xogta, (d) Kooxda kooxda ee 70 Gbaud. Isticmaal leysarka daloolka dibadda ee ganacsiga (ECL) oo leh ballac dhan 100 kHz, dhererka hirarka 1555 nm, iyo awoodda 12 dBm sida side indhaha. Habaynta ka dib, ishaarada indhaha ayaa la xoojiyey iyadoo la isticmaalayo aerbium-doped fiber amplifier(EDFA) si loo magdhabo khasaaraha isku-xidhka-chip-ka iyo khasaaraha gelinta modulator-ka.
Dhammaadka helitaanka, Analyzer Optical Spectrum (OSA) ayaa kormeeraya spectrum spectrum iyo xakamaynta side, sida ku cad sawirka 2 (b) ee calaamada 70 Gbaud. Isticmaal aqbalaha isku xidhan ee laba-laabashada ah si aad u hesho calaamadaha, kaas oo ka kooban isku-darka indhaha ee 90 digrii iyo afar40 GHz photodiodes dheelitiran, waxayna ku xidhan tahay 33 GHz, 80 GSa/s oscilloscope-waqtiga-dhabta ah (RTO) ( Keysight DSOZ634A). Isha labaad ee ECL oo leh ballac dhexdeed 100 kHz ah waxa loo isticmaalaa oscillator maxalli ah (LO). Gudbiyaha ku shaqeeya hal shuruudood, laba kanaal oo elektaroonik ah ayaa loo isticmaalaa beddelka analog-to-dijital (ADC). Xogta waxa lagu duubaa RTO waxaana lagu farsameeyaa iyada oo la isticmaalayo processor signal-ka khadka tooska ah (DSP).
Sida ku cad Jaantuska 2 (c), modulator-ka IQ waxa lagu tijaabiyay qaab qaabaynta QPSK laga bilaabo 40 Gbaud ilaa 75 Gbaud. Natiijooyinku waxay muujinayaan in hoos 7% go'aanka adag ee sixitaanka khaladka hore (HD-FEC), heerka uu gaari karo 140 Gb/s; Marka la eego shuruudaha 20% go'aanka jilicsan sixitaanka qaladka hore (SD-FEC), xawaaruhu wuxuu gaari karaa 150 Gb/s. Jaantuska xiddigaha ee 70 Gbaud waxa lagu muujiyay sawirka 2 (d). Natiijadu waxay ku xaddidan tahay xawaaraha oscilloscope ee 33 GHz, taas oo u dhiganta xajmiga signalka ee ku dhawaad ​​66 Gbaud.

Sida ku cad Jaantuska 2 (b), qaab dhismeedka saddexda cudud wuxuu si wax ku ool ah u xakameyn karaa sidayaasha indhaha oo leh heer madhan oo ka badan 30 dB. Qaab dhismeedkani uma baahna in si buuxda loo cabudhiyo sidaha waxaana sidoo kale loo isticmaali karaa qaataha u baahan tones sideyaasha si ay u soo ceshadaan calaamadaha, sida kuwa qaata Kramer Kronig (KK). Qaade waxaa lagu hagaajin karaa iyada oo loo marayo wareejinta wejiga cududda dhexe si loo gaaro saamiga la rabo sideband sideband (CSR).
Faa'iidooyinka iyo Codsiyada
Marka la barbar dhigo hab-dhaqameedka Mach Zehnder (Modulators MZM) iyo modulators kale oo silikoon ku salaysan optoelectronic IQ, modulator silikoon IQ ee la soo jeediyay wuxuu leeyahay faa'iidooyin badan. Marka hore, cabbirkeedu waa is haysta, in ka badan 10 jeer ayaa ka yar modulators IQ oo ku salaysanMach Zehnder modulators(marka laga reebo suufka isku-xidhka), sidaas awgeed kordhinta cufnaanta isdhexgalka iyo dhimista aagga jajabka. Marka labaad, naqshadaynta korantada ee is dulsaaran uma baahna adeegsiga iska caabiyeyaasha terminal, taas oo hoos u dhigaysa awoodda aaladda iyo tamarta xoogaaba. Marka saddexaad, awoodda xakamaynta side ayaa kor u qaadeysa dhimista awoodda gudbinta, sii wanaajinta waxtarka tamarta.
Intaa waxaa dheer, bandwidth indhaha ee GeSi EAM waa mid aad u ballaaran (in ka badan 30 nanometers), baabi'inta baahida loo qabo xakamaynta jawaab-celinta channels multi-channel iyo soo-saareyaal si ay u xasiliyaan oo u wada shaqeeyaan resonance ee modulators microwaves (MRMs), oo sidaas fududeynaya naqshadeynta.
Modulator-ka IQ-ga ee is haysta oo hufan ayaa aad ugu habboon jiilka soo socda, tirinta kanaalka sare, iyo transceivers yar yar oo isku xidhan ee xarumaha xogta, taas oo u sahlaysa awood sare iyo isgaadhsiin tamar-ku-ool ah.
Silikoon IQ modulator-ka la xakameeyey ayaa soo bandhigaya waxqabad aad u wanaagsan, oo leh xadiga gudbinta xogta ilaa 150 Gb/s ee hoos yimaada 20% xaaladaha SD-FEC. Qaab dhismeedkeeda cudud ee 3-gacan ee ku salaysan GeSi EAM waxay leedahay faa'iidooyin la taaban karo marka la eego raadka, hufnaanta tamarta, iyo fududaynta naqshadaynta. Modulator-kani waxa uu awood u leeyahay in uu cabudhiyo ama isku hagaajiyo sidaha indhaha waxana lagu dhex dari karaa ogaanshaha isku xidhan iyo qorshayaasha ogaanshaha Kramer Kronig (KK) ee xadhkaha badan ee isku xidhan ee isku xidhan. Guulaha la soo bandhigay waxay horseedaan xaqiijinta qalab wax-is-beddeleyaal isku dhafan oo hufan si loo daboolo baahida sii kordheysa ee isgaarsiinta xogta awoodda sare leh ee xarumaha xogta iyo qaybaha kale.