Qalabka elektaroonigga ah ee lithium niobate oo leh filim khafiif ah oo isku dhafan oo heer sare ah

Qaab toosan oo saremodulator-ka elektaroonigga ahiyo codsiga microwave photon
Iyadoo ay sii kordhayaan shuruudaha nidaamyada isgaarsiinta, si loo sii wanaajiyo hufnaanta gudbinta calaamadaha, dadku waxay isku dari doonaan fotonnada iyo elektroonnada si ay u gaaraan faa'iidooyin dhammaystiran, microwave photonics-na way dhalan doontaa. Qalabka elektaroonigga ah ee loo yaqaan 'electro-optical modulator' ayaa loo baahan yahay si korontada loogu beddelo iftiin gudahanidaamyada microwave photonic, tallaabadan muhiimka ahna waxay badanaa go'aamisaa waxqabadka nidaamka oo dhan. Maadaama beddelka calaamadda soo noqnoqoshada raadiyaha loo beddelo domain-ka indhaha uu yahay hab calaamadeed oo analog ah, waana mid caadi ah.modulators-ka elektaroonigga ahwaxay leeyihiin qallooc aan toosnayn oo asal ah, waxaa jira qallooc calaamadeed oo halis ah oo ku jira habka beddelka. Si loo gaaro qaab-dhismeedka toosan ee qiyaas ahaan, barta hawlgalka ee modulator-ka badanaa waxaa lagu hagaajiyaa barta eexda ee toosan, laakiin weli ma buuxin karto shuruudaha isku xirka microwave photon ee toosan ee modulator-ka. Qaab-dhismeedka elektaroonigga ah ee leh toosan sare ayaa si degdeg ah loogu baahan yahay.

Isbeddelka tusmada refractive-ka xawaaraha sare leh ee walxaha silicon waxaa badanaa lagu gaaraa saameynta kala firdhinta plasma-ka ee xorta ah (FCD). Saamaynta FCD iyo isbeddelka isku xirka PN labaduba waa kuwo aan toosnayn, taasoo ka dhigaysa modulator-ka silicon mid aan toosnayn marka loo eego modulator-ka lithium niobate. Agabka lithium niobate waxay muujiyaan heer sare.habaynta elektaroonigga ahsifooyinka ay sabab u tahay saameyntooda Pucker. Isla mar ahaantaana, walxaha lithium niobate waxay leeyihiin faa'iidooyinka bandwidth weyn, sifooyinka modulation wanaagsan, luminta hoose, isdhexgalka fudud iyo iswaafajinta habka semiconductor, isticmaalka lithium niobate filim khafiif ah si loo sameeyo modulator electro-optical oo waxqabad sare leh, marka la barbar dhigo silicon ku dhawaad ​​​​ma jiro "saxan gaaban", laakiin sidoo kale si loo gaaro toosan sare. Qalabka electro-optical-ka ee lithium niobate (LNOI) ee filimka khafiifka ah ee ku yaal dahaarka ayaa noqday jiho horumarineed oo rajo leh. Iyadoo la horumarinayo tignoolajiyada diyaarinta walxaha lithium niobate ee filimka khafiifka ah iyo tignoolajiyada etching hage hage, hufnaanta beddelka sare iyo is-dhexgalka sare ee modulator electro-optical-ka ee lithium niobate ayaa noqotay goobta tacliinta sare iyo warshadaha caalamiga ah.

Astaamaha lithium niobate-ka filimka khafiifka ah
Qorshaha DAP AR ee Mareykanka wuxuu sameeyay qiimeynta soo socota ee walxaha lithium niobate: haddii xarunta kacaanka elektaroonigga ah loogu magac daro walxaha silicon ee suurtogalka ah, markaa meesha uu ku dhashay kacaanka photonics waxaa loo badinayaa in loogu magac daro lithium niobate. Tani waa sababta oo ah lithium niobate wuxuu isku daraa saameynta electro-optical, saamaynta acousto-optical, saamaynta piezoelectric, saamaynta thermoelectric iyo saamaynta photorefractive mid, sida walxaha silicon ee ku jira goobta indhaha.

Marka laga hadlayo astaamaha gudbinta indhaha, maaddada InP waxay leedahay khasaaraha ugu weyn ee gudbinta chip-ka sababtoo ah nuugista iftiinka ee xarigga 1550nm ee si caadi ah loo isticmaalo. SiO2 iyo nitride silicon waxay leeyihiin astaamaha gudbinta ugu fiican, khasaarahana wuxuu gaari karaa heerka ~ 0.01dB/cm; Waqtigan xaadirka ah, luminta hagaha hirarka ee hagaha hirarka lithium niobate ee khafiifka ah wuxuu gaari karaa heerka 0.03dB/cm, luminta hagaha hirarka lithium niobate ee khafiifka ah wuxuu leeyahay awood uu ku sii yaraan karo iyadoo la sii wanaajinayo heerka tignoolajiyada mustaqbalka. Sidaa darteed, maaddada lithium niobate ee khafiifka ah waxay muujin doontaa waxqabad wanaagsan oo loogu talagalay qaab-dhismeedka iftiinka aan firfircooneyn sida wadada sawir-qaadista, shunt iyo microring.

Marka laga hadlayo soo saarista iftiinka, InP oo keliya ayaa leh awoodda ay si toos ah ugu soo saarto iftiinka; Sidaa darteed, si loogu isticmaalo footoonnada microwave-ka, waxaa lagama maarmaan ah in lagu soo bandhigo isha iftiinka ee ku salaysan InP ee ku jirta jajabka photonic-ga ee ku salaysan LNOI iyadoo la adeegsanayo alxanka dib-u-rakibidda ama koritaanka epitaxial-ka. Marka laga hadlayo isbeddelka iftiinka, waxaa kor lagu xoojiyay in walxaha lithium niobate ee khafiifka ah ay fududahay in la gaaro baaxadda modulation-ka oo weyn, danab nus-hir hoose iyo lumis gudbin oo ka hooseeya InP iyo Si. Intaa waxaa dheer, toosanaanta sare ee modulation-ka elektaroonigga ah ee walxaha lithium niobate ee khafiifka ah ayaa lagama maarmaan u ah dhammaan codsiyada microwave-ka.

Marka laga hadlayo habka loo maro iftiinka, jawaabta xawaaraha sare ee elektaroonigga ah ee walxaha khafiifka ah ee lithium niobate waxay ka dhigaysaa badhanka indhaha ee ku salaysan LNOI mid awood u leh inuu beddelo habka loo maro iftiinka xawaaraha sare leh, isticmaalka awoodda ee habka loo maro xawaaraha sare lehna aad ayuu u hooseeyaa. Isticmaalka caadiga ah ee tiknoolajiyada microwave photon ee isku dhafan, jajabka qaabaynta iftiinka ee la xakameeyey wuxuu leeyahay awoodda wareejinta xawaaraha sare leh si uu u daboolo baahiyaha baaritaanka iftiinka degdega ah, astaamaha isticmaalka awoodda aadka u hooseysana si fiican ayaa loogu waafajiyay shuruudaha adag ee nidaamka kala-soocidda wejiga weyn. In kasta oo badhanka indhaha ee ku salaysan InP uu sidoo kale xaqiijin karo isbeddelka waddada iftiinka ee xawaaraha sare leh, wuxuu soo bandhigi doonaa buuq weyn, gaar ahaan marka badhanka indhaha ee heerarka badan la isku dhejiyo, isku-dhafka buuqa ayaa si xun u xumaan doona. Qalabka Silicon, SiO2 iyo silicon nitride waxay kaliya beddeli karaan waddooyinka indhaha iyada oo loo marayo saameynta kulaylka-optic ama saameynta kala-soocidda side, taas oo leh faa'iido darrooyinka isticmaalka awoodda sare iyo xawaaraha wareejinta gaabiska ah. Marka cabbirka kala-soocidda ee safka wejiga uu weyn yahay, ma buuxin karo shuruudaha isticmaalka awoodda.

Marka laga hadlayo kor u qaadista indhaha,amplifier indhaha semiconductor (SOA) oo ku salaysan InP waxay ahayd mid bisil oo loo isticmaalo ganacsiga, laakiin waxay leedahay faa'iidooyin ay ka mid yihiin isku-dhafka buuqa sare iyo awoodda wax soo saarka oo hooseeya, taas oo aan ku habboonayn codsiga footoonnada microwave-ka. Habka kor u qaadista parametric ee hagaha hirarka lithium niobate ee khafiifka ah oo ku salaysan kicinta xilliyeed iyo rogidda waxay gaari kartaa buuq yar iyo kor u qaadista iftiinka ee chip-ka oo awood badan leh, kaas oo si fiican u dabooli kara shuruudaha tignoolajiyada footoonnada microwave-ka ee isku-dhafan ee kor u qaadista iftiinka ee chip-ka.

Marka laga hadlayo ogaanshaha iftiinka, lithium niobate-ka khafiifka ah wuxuu leeyahay astaamo gudbin wanaagsan oo iftiinka ku jira 1550 nm band. Shaqada beddelka sawir-qaadista lama xaqiijin karo, sidaa darteed codsiyada sawir-qaadista microwave-ka, si loo daboolo baahiyaha beddelka sawir-qaadista ee chip-ka. Cutubyada ogaanshaha InGaAs ama Ge-Si waa in lagu soo bandhigaa jajabyada isku-dhafan ee photonic-ga ee ku salaysan LNOI iyadoo la adeegsanayo alxanka dib-u-soo-celinta ama koritaanka epitaxial. Marka la eego isku-xidhka fiber-ka indhaha, sababtoo ah fiber-ka indhaha laftiisu waa walxaha SiO2, goobta qaabka ee hagaha hirarka SiO2 wuxuu leeyahay heerka ugu sarreeya ee la jaanqaadaya goobta qaabka ee fiber-ka indhaha, isku-xidhkuna waa kan ugu habboon. Dhexroorka goobta qaabka ee hagaha hirarka ee aadka u xaddidan ee lithium niobate-ka filimada khafiifka ah waa qiyaastii 1μm, kaas oo aad uga duwan goobta qaabka ee fiber-ka indhaha, sidaa darteed isbeddelka booska saxda ah ee habka waa in la sameeyaa si uu ula mid noqdo goobta qaabka ee fiber-ka indhaha.

Marka laga hadlayo isdhexgalka, in agabyo kala duwan ay leeyihiin awood isku-dhafan oo sare waxay inta badan ku xiran tahay radius-ka foorarsiga ee hagaha hirarka (oo ay saamayso xaddidaadda goobta habka hagaha hirarka). Hagaha hirarka ee aadka u xaddidan wuxuu u oggolaanayaa radius-ka foorarsiga yar, kaas oo aad ugu habboon xaqiijinta isdhexgalka sare. Sidaa darteed, hagaha hirarka lithium niobate ee khafiifka ah waxay leeyihiin awood ay ku gaaraan is-dhexgal sare. Sidaa darteed, muuqaalka filimka khafiifka ah ee lithium niobate wuxuu suurtogal ka dhigayaa in walxaha lithium niobate ay runtii ciyaaraan doorka "silicon" ee indhaha. Si loo isticmaalo microwave photons, faa'iidooyinka lithium niobate ee filimka khafiifka ah ayaa aad u muuqda.