Filim khafiif ah oo heersare ah oo isku dhafan lithium niobate modulator electro-optic

linearity saremodulator elektaroonik ahiyo codsiga mikrowave photon
Iyada oo la raacayo shuruudaha sii kordhaya ee hababka isgaarsiinta, si loo sii wanaajiyo waxtarka gudbinta calaamadaha, dadku waxay isku dhejin doonaan photons iyo electrons si ay u gaaraan faa'iidooyin dhammaystiran, iyo sawir-qaade microwave ayaa dhalan doona. Modulator-ka korantada indhaha ayaa loo baahan yahay si ay korontadu ugu beddelato iftiinka gudahanidaamyada photonic microwave, iyo tallaabadan muhiimka ah sida caadiga ah ayaa go'aamisa waxqabadka nidaamka oo dhan. Maaddaama u beddelka calaamadda soo noqnoqoshada raadiyaha ee isha isha ay tahay habka signalka analoogga ah, oo caadi ahmodulators electro-opticalwaxay leeyihiin sinaan la'aan soo jireen ah, waxaa jira qallooc weyn oo calaamad u ah habka beddelka. Si loo gaaro hab-habeyn toosan oo qiyaas ah, goobta shaqada ee modulator-ka waxaa badanaa lagu hagaajiyaa barta eexda orthogonal, laakiin wali ma buuxin karto shuruudaha isku xirka mikrowave photon ee toosan modulator-ka. Qalabka korantada-optic ee leh khad sare ayaa si degdeg ah loogu baahan yahay.

Habaynta tusmaynta xawaaraha sare ee dib-u-celinta ee alaabta silikon waxa badanaa lagu gaadhaa saamaynta fidinta sidaha bilaashka ah (FCD). Saamaynta FCD iyo habaynta isku xidhka PN labaduba waa kuwo aan toos ahayn, taas oo ka dhigaysa modulator-ka silikoon mid ka toosan modulator-ka lithium niobate. Maaddooyinka lithium niobate waxay muujinayaan heer sareHababka elektaroonigga ahguryaha ay sabab u tahay saamaynta Pucker. Isla mar ahaantaana, maaddada lithium niobate waxay leedahay faa'iidooyinka xajmiyada ballaaran, sifooyinka habaynta wanaagsan, luminta hoose, isdhexgalka fudud iyo waafaqsanaanta habka semiconductor, isticmaalka filimka khafiifka ah ee lithium niobate si loo sameeyo modulator-electro-optical modulator, marka la barbardhigo silicon ku dhawaad ​​ma jiro "saxan gaaban", laakiin sidoo kale si loo gaaro toosan sare. Filimka khafiifka ah ee lithium niobate (LNOI) modulator-ka korantada-optic-ga ee dahaarka ayaa noqday jiho horumarineed oo rajo leh. Iyada oo horumarinta tignoolajiyada diyaarinta walxaha dhuuban ee lithium niobate iyo waveguide tignoolajiyada etching, hufnaanta beddelka sare iyo is dhexgalka sare ee filimka khafiifka ah ee lithium niobate modulator electro-optic ayaa noqday beerta akadeemiyada caalamiga ah iyo warshadaha.

Astaamaha filimka khafiifka ah ee lithium niobate
Qorshaynta DAP AR ee Maraykanka waxay samaysay qiimaynta soo socota ee agabka lithium niobate: haddii xarunta kacaanka elektarooniga ah lagu magacaabo maadada silikoon ee suurtogalka ah, markaa goobta dhalashada ee kacaanka photonics waxay u badan tahay in lagu magacaabo lithium niobate . Tani waa sababta oo ah lithium niobate waxay isku daraysaa saamaynta elektaroonigga ah, saamaynta acousto-optical, saamaynta piezoelectric, saamaynta korantada iyo saamaynta sawir-qaadista ee mid ka mid ah, sida walxaha silikoon ee goobta indhaha.

Marka la eego sifooyinka gudbinta indhaha, walxaha InP waxay leeyihiin khasaaraha ugu weyn ee gudbinta on-chip sababtoo ah nuugista iftiinka ee band 1550nm ee sida caadiga ah loo isticmaalo. SiO2 iyo nitride silicon waxay leeyihiin sifooyinka gudbinta ugu fiican, khasaaruhuna wuxuu gaari karaa heerka ~ 0.01dB / cm; Waqtigan xaadirka ah, luminta waveguide ee filimka khafiifka ah ee lithium niobate waveguide waxay gaari kartaa heerka 0.03dB/cm mustaqbalka. Sidaa darteed, filimka khafiifka ah ee lithium niobate wuxuu muujin doonaa waxqabad wanaagsan oo loogu talagalay qaababka iftiinka aan tooska ahayn sida jidka sawir-qaadista, shunt iyo microring.

Marka la eego jiilka iftiinka, kaliya InP ayaa awood u leh inuu si toos ah u iftiimiyo; Sidaa darteed, codsiga mikrowave photons, waxaa lagama maarmaan ah in la soo bandhigo isha iftiinka ku salaysan ee InP ee ku salaysan LNOI chip isku dhafan ee photonic iyadoo loo marayo habka dib-u-celinta alxanka ama koritaanka epitaxial. Marka la eego habaynta iftiinka, waxaa lagu nuuxnuuxsaday korka in filimka khafiifka ah ee lithium niobate walxaha ay fududahay in la gaaro xajmiga xajmiga xajmiga, hoose ee nuska mawjada iyo luminta gudbinta hoose marka loo eego InP iyo Si. Intaa waxaa dheer, linearity sare ee modulation electro-optical ee film khafiif ah walxaha lithium niobate ayaa lagama maarmaan u ah dhammaan codsiyada photon microwave.

Marka la eego jihaynta indhaha, jawaabta xawaaraha sare ee elektiroonigga-optical-ka ee walxaha khafiifka ah ee lithium niobate waxay ka dhigaysaa beddelka indhaha ee ku salaysan LNOI oo awood u leh beddelashada dariiqa indhaha ee xawaaraha sare leh, iyo isticmaalka awoodda beddelka xawaaraha sare ee noocan oo kale ah ayaa sidoo kale aad u hooseeya. Codsiga caadiga ah ee tignoolajiyada photon microwave-ka ee isku-dhafan, chip-ka muraayadda indhaha ee isha lagu hago ayaa awood u leh beddelashada xawaaraha sare si uu u daboolo baahiyaha iskaanka iftiinka degdega ah, iyo astaamaha isticmaalka awoodda aadka u hooseeya ayaa si fiican loogu habeeyey shuruudaha adag ee waaweyn. -qaabka habayn weji leh. In kasta oo dareemaha indhaha ee ku salaysan InP uu sidoo kale ogaan karo beddelka dariiqa indhaha ee xawaaraha sare leh, waxay soo bandhigi doontaa buuq weyn, gaar ahaan marka furaha indhaha ee heerka-badan la jeexjeexo, isku-dheellitirka sanqadha aad ayuu u xumaan doonaa. Silicon, SiO2 iyo Silicon nitride agabka waxa kaliya oo ay ku badali karaan wadooyinka indhaha iyada oo loo marayo saamaynta kulaylka-optical ama saamaynta kala firdhinta side, kaas oo leh faa'iido darrada isticmaalka awooda sare iyo xawaaraha beddelka aayar. Marka cabbirka isku-dubbada ee hannaan-wajigu uu weyn yahay, ma buuxin karo shuruudaha isticmaalka tamarta.

Marka la eego cod-weyneynta indhaha,cod-weyneeye indho-indheyn (SOA) oo ku salaysan InP waxay u bislaatay isticmaalka ganacsiga, laakiin waxay leedahay faa'iido darrooyinka isku-dhafka sanqadha sare iyo awoodda wax-soo-saarka ee hooseeya, taas oo aan ku habboonayn codsiga microwave-ka. Habka kobcinta parametric ee lithium niobate waveguide-filim khafiif ah oo ku salaysan firfircooni xilliyeed iyo rogaal celis ah ayaa gaari kara buuq hoose iyo awood sare oo ku taal-chip optical amplification, kaas oo si fiican u buuxin kara shuruudaha tignoolajiyada isku dhafan ee mikrowave ee farsamada kor u qaadida on-chip optical.

Marka la eego ogaanshaha iftiinka, filimka khafiifka ah ee lithium niobate wuxuu leeyahay sifooyin gudbin oo wanaagsan oo iftiinka 1550 nm ah. Shaqada beddelka korontadu lama xaqiijin karo, sidaas darteed codsiyada mikrowave ee photon, si loo daboolo baahiyaha beddelka sawir-qaadista ee chip-ka. Unugyada ogaanshaha InGaAs ama Ge-Si waxay u baahan yihiin in lagu soo bandhigo LNOI chips-ka isku-dhafan ee photonic-ka ah iyadoo dib loo raray alxanka ama koritaanka epitaxial. Marka la eego isku xirka fiber optic, sababtoo ah fiber indhaha laftiisa waa walxaha SiO2, goobta qaab-dhismeedka ee SiO2 waveguide ayaa leh heerka ugu sarreeya ee u dhigma qaab-dhismeedka fiber-ka, isku-xidhka ayaa ah kan ugu habboon. Dhexroorka goobta qaab-dhismeedka mawjada aadka u xaddidan ee filimka khafiifka ah ee lithium niobate waxay ku saabsan tahay 1μm, taas oo aad uga duwan qaab-dhismeedka fiber-ka indhaha, sidaa darteed beddelka booska saxda ah waa in la sameeyaa si loo waafajiyo goobta qaab-fiber indhaha.

Marka la eego isdhexgalka, in agabyada kala duwani ay leeyihiin awood is-dhexgalka sare waxay ku xiran tahay inta badan radius qalooca ee hagaha mawjada (oo ay saameysay xaddidaadda habka waveguide). Hagaha mawjadaha si xoog leh loo xaddiday waxay u oggolaanaysaa radius foorarsi yar, kaas oo aad ugu habboon xaqiijinta is-dhexgalka sare. Sidaa darteed, fiilooyinka khafiifka ah ee lithium niobate waveguides waxay leeyihiin karti ay ku gaaraan isdhexgalka sare. Sidaa darteed, muuqaalka filimka khafiifka ah ee lithium niobate wuxuu suurtogal ka dhigayaa in walxaha lithium niobate ay si dhab ah u ciyaaraan doorka "silicon" indhaha. Codsiga mikrowave photons, faa'iidooyinka filimka khafiifka ah ee lithium niobate ayaa aad u muuqda.