Hordhac ku saabsan Qaab-dhismeedka iyo WaxqabadkaFilim khafiif ah oo Lithium Niobate ah oo Electro optic Modulator ah
An modulator-ka elektaroonigga ahiyadoo lagu saleynayo qaab-dhismeedyo kala duwan, hirarka hirarka, iyo goobaha lithium niobate ee filimka khafiifka ah, iyo isbarbardhigga waxqabadka dhammaystiran ee noocyada kala duwan eeQaabeeyayaasha EOM, iyo sidoo kale falanqayn ku saabsan cilmi-baarista iyo adeegsigamodulators lithium niobate filim khafiif ahmeelaha kale.
1. Modulator lithium niobate oo khafiif ah oo aan lahayn dalool aan fiicnayn
Noocan modulator-ka ah wuxuu ku salaysan yahay saamaynta elektaroonigga ah ee aadka u fiican ee kiristaalka lithium niobate waana qalab muhiim u ah helitaanka isgaarsiinta indhaha ee xawaaraha sare iyo masaafada dheer. Waxaa jira saddex qaab-dhismeed oo waaweyn:
1.1 Qalabka korantada hirarka safarka ee MZI: Kani waa naqshadda ugu caadiga ah. Kooxda cilmi-baarista ee Jaamacadda Harvard waxay markii ugu horreysay gaartay nooc waxqabad sare leh sannadkii 2018, iyadoo horumarinno dambe ay ku jiraan rarista awoodda oo ku salaysan substrate-ka quartz (bandwidth sare laakiin aan la jaan qaadi karin silicon-ku-saleysan) iyo ku-saleysan silicon-ku-saleysan oo ku salaysan godka substrate-ka, gaarista bandwidth sare (>67 GHz) iyo calaamadda xawaaraha sare leh (sida 112 Gbit/s PAM4).
1.2 Laalaaban karo MZI modulator: Si loo soo gaabiyo cabbirka qalabka loona la qabsado modules-yada is haysta sida QSFP-DD, daaweynta polarization, cross waveguide ama electrodes microstructure rogan ayaa loo isticmaalaa in lagu yareeyo dhererka qalabka kala bar lana gaaro ballaca 60 GHz.
1.3Isku-darka Hal/Laba-geesoodka ah ee Isku-dhafan ee Orthogonal (IQ): Wuxuu adeegsadaa qaab-dhismeed heer sare ah si uu u xoojiyo heerka gudbinta. Kooxda cilmi-baarista Cai ee Jaamacadda Sun Yat sen waxay gaareen modulator-ka IQ-ga ee ugu horreeyay ee ku-meel-gaarka ah sannadkii 2020. Qalabka IQ-ga ee laba-geesoodka ah ee la sameeyay mustaqbalka wuxuu leeyahay waxqabad wanaagsan, nooca ku salaysan substrate-ka quartz-na wuxuu dejiyay rikoodh hal-mowjad ah oo ah 1.96 Tbit/s.
2. Nooca daloolka resonant modulator lithium niobate khafiif ah
Si loo gaaro modulators bandwidth aad u yar iyo weyn, waxaa jira qaabab kala duwan oo godadka resonant ah oo la heli karo:
2.1 Qalabka sawir-qaadista (PC) iyo qalabka sawir-qaadista yar yar: Kooxda cilmi-baarista ee Lin ee Jaamacadda Rochester ayaa soo saartay qalabkii ugu horreeyay ee sameeya qalabka sawir-qaadista sare leh. Intaa waxaa dheer, qalabka sawir-qaadista yar yar ee ku salaysan isku-dhafka kala duwan ee silicon lithium niobate iyo isku-dhafka isku-dhafan ayaa sidoo kale la soo jeediyay, taasoo gaareysa xawaaraha dhowr GHz.
2.2 Qalabka Bragg ee godadka resonant-ka: oo ay ku jiraan godka Fabry Perot (FP), qalabka Bragg ee hagaha (WBG), iyo qalabka iftiinka gaabiska ah (SL). Qaab-dhismeedyadan waxaa loogu talagalay inay dheellitiraan cabbirka, u dulqaadashada, iyo waxqabadka, tusaale ahaan, qalabka 2 × 2 FP ee resonant-ka wuxuu gaaraa bandwidth aad u weyn oo ka badan 110 GHz. Qalabka light-ka gaabiska ah ee ku salaysan shabagga Bragg ee isku xiran wuxuu ballaariyaa baaxadda shaqada.
3. Qalabka isku dhafan ee isku dhafan ee lithium niobate modulator
Waxaa jira saddex hab oo is-dhexgal oo waaweyn oo lagu dari karo iswaafajinta tignoolajiyada CMOS ee aaladaha ku salaysan silicon iyo waxqabadka wax-ka-beddelka ee lithium niobate:
3.1 Nooca xidhmada isku-dhafka ah: Iyadoo si toos ah ugu xidhan benzocyclobutene (BCB) ama silicon dioxide, lithium niobate-ka filimka khafiifka ah ayaa loo wareejiyaa goob silicon ama silicon nitride ah, taasoo gaadhaysa heerka wafer-ka, isku-darka heerkulka sare ee deggan. Qaabeeyaha ayaa muujinaya baaxadda sare (>70 GHz, xitaa ka badan 110 GHz) iyo awoodda gudbinta calaamadaha xawaaraha sare leh.
3.2 Isku-darka kala duwan ee walxaha hagaha hirarka: dhigista silicon ama silicon nitride ee filimka khafiifka ah ee lithium niobate sida hagaha hirarka culayska ayaa sidoo kale gaadha hab-dhaqan elektro-optic oo hufan.
3.3 Isku-darka kala duwan ee daabacaadda wareejinta micro (μ TP): Tani waa tiknoolajiyad la filayo in loo isticmaalo wax soo saarka baaxadda weyn, kaas oo wareejiya aaladaha shaqada ee hore loo sii diyaariyey si loogu bartilmaameedsado jajabyada iyada oo loo marayo qalab sax ah, iyadoo laga fogaanayo habaynta adag ee ka dambeysa. Waxaa si guul leh loogu dabaqay silicon nitride iyo goobaha ku salaysan silicon, iyadoo la gaarayo ballaca tobanaan GHz.
Marka la soo koobo, maqaalkani wuxuu si nidaamsan u qeexayaa khariidadda tignoolajiyada ee modulators-ka elektiroonigga ah ee ku salaysan goobaha lithium niobate ee khafiifka ah, laga bilaabo raadinta qaab-dhismeedka godadka aan lahayn resonant-ka waxqabadka sare leh iyo baaxadda weyn, sahaminta qaab-dhismeedka godadka resonant-ka ee yar yar, iyo isku-darka goobaha photonic-ka ee ku salaysan silicon ee bisil. Waxay muujinaysaa awoodda weyn iyo horumarka joogtada ah ee modulators-ka lithium niobate ee khafiifka ah ee jebinta caqabadaha waxqabadka ee modulators-ka dhaqameed iyo gaarista isgaarsiinta indhaha ee xawaaraha sare leh.
Waqtiga boostada: Maarso-31-2026