Cilmi-baaristii ugu dambeysay ee laser-ka-labada-midabka leh

Cilmi-baaristii ugu dambeysay ee laser-ka-labada-midabka leh

Layserrada saxanka Semiconductor (SDL lasers), oo sidoo kale loo yaqaanno vertical external cavity surface-emitting lasers (VECSEL), ayaa soo jiitay fiiro gaar ah sanadihii ugu dambeeyay. Waxay isku daraysaa faa'iidooyinka faa'iidada semiconductor iyo resonators-ka adag. Ma aha oo kaliya in ay si wax ku ool ah u yareyso xaddidaadda aagga qiiqa ee taageerada hal-hab ee laser-ka caadiga ah ee semiconductor, laakiin sidoo kale waxay leedahay naqshadeynta bandgap semiconductor dabacsan iyo sifooyinka faa'iidada alaabta sare. Waxaa lagu arki karaa xaalado badan oo kala duwan oo codsi ah, sida qaylada hooselaser-linewidth cidhiidhi ahwax soo saarka, jiilka garaaca garaaca soo noqnoqda ultra-gaaban, nidaamka sare ee harmonic jiilka, iyo tignoolajiyada hagaha sodium, iwm. Iyadoo horumarinta tignoolajiyada, shuruudo sare ayaa loo soo bandhigay dabacsanaan dhererkeeda. Tusaale ahaan, ilo iftiin isku xiran oo laba-wave-dherer ah ayaa muujiyay qiimaha arji aad u sarreeya ee meelaha soo ifbaxaya sida lidar-ka-hortagga faragelinta, interferometry holographic, isgaarsiinta isku dhufashada qaybinta dhererka, dhexda-infrared ama jiilka terahertz, iyo shanlooyinka soo noqnoqda indhaha ee midabada badan. Sida loo gaaro iftiinka sare ee dual-color laysarka semiconductor disc lasers iyo si wax ku ool ah loo xakameeyo tartanka faa'iidada ka dhexeeya hirarka dhererka badan ayaa had iyo jeer ahaa dhibaato cilmi-baarista ee goobtan.

Dhawaan, laba-midablaser semiconductorkooxda Shiinaha ayaa soo jeedisay naqshad cusub oo chip-ga si wax looga qabto caqabadan. Iyada oo loo marayo cilmi-baaris qoto-dheer oo tirooyin ah, waxay ogaadeen in si sax ah u habaynta tirada heerkulka la xidhiidha si fiican loo helo shaandhaynta iyo saamaynta shaandhaynta microcavity semiconductor ayaa la filayaa inay gaadho kontoroolka dabacsan ee faa'iidada laba-midab. Iyada oo taas lagu salaynayo, kooxdu waxay si guul leh u nashqadeeyeen 960/1000 nm gasha dhalaalka sare leh. Laysarkani wuxuu ku shaqeeyaa qaab aasaasi ah oo u dhow xadka kala qaybinta, oo leh dhalaal wax soo saarkiisu sareeyo ilaa 310 MW/cm²sr.

Lakabka faa'iidada saxanka semiconductor waa dhumuc yar oo mikromitir ah, iyo Fabry-Perot microcavity ayaa ka dhex abuurmay is-dhex galka semiconductor-hawo iyo kan hoose ee loo qaybiyay Bragg. Daawaynta xuubka-yaryar-yar ee semiconductor sida shaandhaynta muraayadda ku dhex jirta ee chip waxay si fiican u beddeli doontaa faa'iidada tirada. Dhanka kale, saamaynta shaandhaynta microcavity iyo faa'iidada semiconductor waxay leeyihiin heerar kala duwanaansho heerkul ah. Marka lagu daro xakamaynta heerkulka, beddelka iyo nidaaminta hirarka dhererka wax soo saarka waa la gaari karaa. Iyada oo ku saleysan sifooyinkan, kooxdu waxay xisaabisay oo dejisay faa'iidada ugu sarreysa ee tirada si fiican 950 nm heerkulka 300 K, iyadoo heerka qulqulka heerkulka hirarka faa'iidada uu yahay ku dhawaad ​​0.37 nm/K. Ka dib, kooxdu waxay nashqadeeyeen qodobka xannibaadda dheer ee chip-ka iyadoo la adeegsanayo habka matrixka gudbinta, oo leh hirarka dhererka ugu sarreeya ee qiyaastii 960 nm iyo 1000 nm siday u kala horreeyaan. Jilidyadu waxay daaha ka qaadeen in heerka qulqulka heerkulka uu ahaa kaliya 0.08 nm/K. Isticmaalka tignoolajiyada kaydinta uumiga kiimikada birta-organic ee koritaanka epitaxial iyo si joogto ah u wanaajinta habka koritaanka, jajabyada faa'iidada tayada sare leh ayaa si guul leh loo sameeyay. Natiijooyinka cabbiraadda sawir-qaadista waxay si buuxda ula socotaa natiijooyinka jilitaanka. Si loo yareeyo culeyska kulaylka loona gaaro gudbinta awoodda sare, habka baakadaha semiconductor-diamond chip waa la sii horumariyay.

Kadib markii ay dhamaystireen baakadaha chip-ka, kooxdu waxay samaysay qiimayn dhamaystiran oo ku saabsan waxqabadkeeda laysarka. Habka hawlgalka ee joogtada ah, adoo xakameynaya awoodda bamka ama heerkulka kulaylka, hirarka qiiqa waxaa si dabacsan loo hagaajin karaa inta u dhaxaysa 960 nm iyo 1000 nm. Marka awoodda bamka ay ku jirto xad gaar ah, layserku wuxuu sidoo kale gaari karaa hawlgal laba-mawjadaha dhererka ah, oo leh dhexda mawjadaha ilaa 39.4 nm. Waqtigan xaadirka ah, awoodda mowjadda ugu badan ee joogtada ahi waxay gaartaa 3.8 W. Dhanka kale, laysarka wuxuu ku shaqeeyaa qaab aasaasi ah oo u dhow xadka kala qaybsanaanta, oo leh isug tayo leh M² oo keliya 1.1 iyo iftiin sare oo gaaraya qiyaastii 310 MW/cm²sr. Kooxdu waxay sidoo kale samaysay cilmi-baaris ku saabsan waxqabadka mowjadaha joogtada ah ee joogtada ahleysarka. Calaamadaha isugeynta soo noqnoqda ayaa si guul leh loo arkay iyadoo la geliyo muraayadda indhaha ee LiB₃O₅ godka resonant, taasoo xaqiijinaysa is-waafajinta hirarka laba-geesoodka ah.

Iyada oo loo marayo naqshadeynta chip-kan xariifnimada leh, isku dhafka dabiiciga ah ee quantum-ka si fiican ayaa loo shaandheeyay iyo shaandhaynta daloolka-yaraha ah ayaa la gaadhay, iyada oo aasaaska naqshadaynta u dhigaysa xaqiijinta ilo laysarka laba-midab leh. Marka la eego tilmaamayaasha waxqabadka, laysarkan hal-chip-ka ah ee laba-midabka leh wuxuu gaaraa dhalaal sare, dabacsanaan sare iyo wax-soo-saarka laydhka coaxial ee saxda ah. Iftiinkeedu waa heerka hogaamineed ee caalamiga ah ee goobta hadda jirta ee leysarka semiconductor-ka ah ee hal-chip ah. Marka la eego codsiga la taaban karo, guushan ayaa la filayaa inay si wax ku ool ah u wanaajiso saxnaanta ogaanshaha iyo awoodda ka-hortagga faragelinta ee lidar-midab badan leh ee jawiga adag iyadoo la adeegsanaayo iftiinkeeda sare iyo sifooyin laba midab leh. Dhinaca shanlooyinka soo noqnoqda indhaha, wax soo saarkeeda laba-mawjadaha dhererka ah ee deggan waxay siin kartaa taageero muhiim ah codsiyada sida cabbirka muuqaalka saxda ah iyo dareenka indhaha ee xallinta sare.