Walxaha lithium niobate ee khafiifka ah iyo modulator-ka lithium niobate ee khafiifka ah

Faa'iidooyinka iyo muhiimadda lithium niobate-ka filimka khafiifka ah ee ku jira tignoolajiyada photon-ka ee microwave-ka ee isku dhafan

Tiknoolajiyada Microwave-ka ee loo yaqaan 'photon'Waxay leedahay faa'iidooyinka baaxadda shaqada ee ballaaran, awoodda farsamaynta ee is barbar socota oo xooggan iyo luminta gudbinta oo hooseysa, taas oo awood u leh inay jebiso caqabadda farsamo ee nidaamka microwave-ka dhaqameed iyo inay horumariso waxqabadka qalabka macluumaadka elektaroonigga ah ee militariga sida radar, dagaalka elektaroonigga ah, isgaarsiinta iyo cabbirka iyo xakamaynta. Si kastaba ha ahaatee, nidaamka microwave-ka ee ku salaysan aaladaha kala duwan wuxuu leeyahay dhibaatooyin sida mugga weyn, miisaan culus iyo xasillooni darro liidata, taas oo si weyn u xaddidaysa isticmaalka tiknoolajiyada microwave-ka ee goobaha hawada sare iyo kuwa hawada sare. Sidaa darteed, tiknoolajiyada microwave-ka ee isku dhafan ayaa noqonaysa taageero muhiim ah si loo jebiyo codsiga microwave-ka ee nidaamka macluumaadka elektaroonigga ah ee militariga iyo in si buuxda loo siiyo faa'iidooyinka tiknoolajiyada microwave-ka.

Waqtigan xaadirka ah, tignoolajiyada isdhexgalka sawir-qaadista ee ku salaysan SI iyo tignoolajiyada isdhexgalka sawir-qaadista ee ku salaysan INP ayaa sii kordhaya ka dib sannado badan oo horumar ah oo ku saabsan isgaarsiinta indhaha, waxaana suuqa la geliyay badeecooyin badan. Si kastaba ha ahaatee, isticmaalka sawir-qaadista sawir-qaadista microwave-ka, waxaa jira dhibaatooyin qaar oo ku jira labada nooc ee tignoolajiyada isdhexgalka sawir-qaadista: tusaale ahaan, isku-dhafka elektaroonigga ah ee aan tooska ahayn ee modulator-ka Si iyo modulator-ka InP waa mid ka soo horjeeda heerka toosan iyo astaamaha firfircoon ee waaweyn ee ay raacdo tignoolajiyada sawir-qaadista microwave-ka; Tusaale ahaan, badhanka indhaha ee silicon-ka ee xaqiijiya beddelka wadada indhaha, ha ahaato mid ku salaysan saameynta kulaylka-indhaha, saameynta piezoelectric, ama saameynta kala-baxa duritaanka side, waxay leedahay dhibaatooyinka xawaaraha beddelka gaabiska ah, isticmaalka awoodda iyo isticmaalka kulaylka, kaas oo aan la kulmi karin sawirka iftiinka degdega ah iyo codsiyada sawir-qaadista sawir-qaadista microwave-ka ee cabbirka weyn.

Lithium niobate had iyo jeer wuxuu ahaa doorashada koowaad ee xawaaraha sarehabaynta elektaroonigga ahagabyada sababtoo ah saameynteeda elektaroonigga tooska ah ee aadka u fiican. Si kastaba ha ahaatee, lithium niobate-ka dhaqameedmodulator-ka elektaroonigga ahwaxaa laga sameeyay walxo kiristaal ah oo lithium niobate ah oo aad u weyn, cabbirka qalabkuna aad buu u weyn yahay, kaas oo aan dabooli karin baahiyaha tignoolajiyada microwave photon ee isku dhafan. Sida loogu daro walxaha lithium niobate oo leh isku-dhafka elektaroonigga toosan ee nidaamka tignoolajiyada microwave photon ee isku dhafan ayaa noqotay yoolka cilmi-baarayaasha khuseeya. Sannadkii 2018, koox cilmi-baaris ah oo ka socota Jaamacadda Harvard ee Mareykanka ayaa markii ugu horreysay soo sheegtay tignoolajiyada isdhexgalka photon ee ku salaysan lithium niobate filim khafiif ah oo ku jira Dabeecadda, sababtoo ah tignoolajiyadu waxay leedahay faa'iidooyinka isdhexgalka sare, baaxadda weyn ee isbeddelka electro-optical, iyo xariiqa sare ee saamaynta electro-optical, markii la bilaabay, waxay isla markiiba keentay dareenka tacliinta iyo warshadaha ee ku saabsan is-dhexgalka photon iyo microwave photon. Marka laga eego aragtida codsiga microwave photon, warqaddani waxay dib u eegaysaa saameynta iyo muhiimadda tignoolajiyada isdhexgalka photon ee ku salaysan lithium niobate filim khafiif ah oo ku saabsan horumarinta tignoolajiyada microwave photon.

Qalabka lithium niobate ee khafiifka ah iyo filim khafiif ahmodulator lithium niobate
Labadii sano ee la soo dhaafay, nooc cusub oo ah walxaha lithium niobate ayaa soo baxay, taas oo ah, filimka lithium niobate ayaa laga soo saaraa kiristaalka lithium niobate ee weyn iyadoo la adeegsanayo habka "gooynta ion" waxaana lagu xiraa wafer-ka Si iyadoo la adeegsanayo lakab silica ah si loo sameeyo walax LNOI (LiNbO3-On-Insulator) [5], kaas oo loo yaqaan walax lithium niobate filim khafiif ah oo ku jirta warqaddan. Hagaha hirarka ee leh dherer ka badan 100 nanometer ayaa lagu dhejin karaa walxaha lithium niobate filim khafiif ah iyadoo la adeegsanayo habka loo habeeyey ee qallajinta, farqiga tusmada refractive ee wax ku oolka ah ee hagaha hirarka ee la sameeyay wuxuu gaari karaa in ka badan 0.8 (oo aad uga sarreeya farqiga tusmada refractive ee hagaha hirarka lithium niobate ee dhaqameed ee 0.02), sida lagu muujiyey Jaantuska 1. Hagaha hirarka ee aadka u xaddidan wuxuu sahlayaa in la waafajiyo goobta iftiinka iyo goobta microwave-ka marka la naqshadaynayo modulator-ka. Sidaa darteed, waa faa'iido in la gaaro danab nus-hir hoose iyo ballaca modulation-ka weyn dherer gaaban.

Muuqaalka hagaha wave-ka ee lithium niobate ee lumaya oo hooseeya ayaa jebiya meesha danabku ka jiro ee wadista sare ee modulator-ka electro-optic-ga ee lithium niobate ee dhaqameed. Kala fogaanshaha elektroodka waxaa loo dhimi karaa ~ 5 μm, isku-darka u dhexeeya goobta korontada iyo goobta qaabka indhaha ayaa si weyn u kordha, vπ · L-na wuu ka yar yahay in ka badan 20 V ·cm ilaa wax ka yar 2.8 V ·cm. Sidaa darteed, danab-badh-hir isku mid ah, dhererka qalabka si weyn ayaa loo dhimi karaa marka la barbar dhigo modulator-ka dhaqameed. Isla mar ahaantaana, ka dib marka la hagaajiyo xuduudaha ballaca, dhumucda iyo kala-goynta elektroodka hirarka socda, sida ka muuqata sawirka, modulator-ku wuxuu yeelan karaa awoodda bandwidth-ka modulation-ka aadka u sarreeya oo ka weyn 100 GHz.

Jaantuska 1 (a) qaybinta qaabka la xisaabiyay iyo (b) sawirka qaybta isgoyska ee hagaha hirarka LN

Jaantuska 2 (a) Qaab-dhismeedka hagaha hirarka iyo elektroodka iyo （b) salka u ah modulator-ka LN

Isbarbardhigga modulators-ka lithium niobate ee filimka khafiifka ah iyo modulators-ka ganacsiga ee lithium niobate ee dhaqameed, modulators-ka ku salaysan silicon iyo modulators-ka indium phosphide (InP) iyo modulators-yada kale ee xawaaraha sare leh ee elektaroonigga-indhaha, xuduudaha ugu muhiimsan ee isbarbardhigga waxaa ka mid ah:
(1) Badeecad dhererkeedu yahay nus-hir (vπ ·L, V·cm), oo cabbiraysa waxtarka wax-ka-beddelka ee modulator-ka, marka qiimaha yar yahay, ayaa hufnaanta wax-ka-beddelka sare u kacdaa;
(2) 3 dB modulation bandwidth (GHz), kaas oo cabbira jawaabta modulator-ka ee modulation-ka soo noqnoqda sare;
(3) Lumista gelinta indhaha (dB) ee gobolka wax-ka-beddelka. Waxaa laga arki karaa jadwalka in qalabka lithium niobate ee filimka khafiifka ah uu leeyahay faa'iidooyin cad oo ku jira baaxadda wax-ka-beddelka, danabka nus-hir-wareegga, luminta isku-xidhka indhaha iyo wixii la mid ah.

Silicon, oo ah saldhigga optoelectronics-ka isku dhafan, ayaa ilaa hadda la sameeyay, geeddi-socodku waa mid bisil, yarayntiisu waxay ku habboon tahay is-dhexgalka baaxadda weyn ee aaladaha firfircoon/dadban, modulator-keedana si ballaaran oo qoto dheer ayaa loogu bartay dhinaca isgaarsiinta indhaha. Habka wax-ka-beddelka elektiroonigga ah ee silicon waa inta badan hoos u dhigista side-ka, duritaanka side-ka iyo ururinta side-ka. Kuwaas waxaa ka mid ah, ballaca modulator-ka ayaa ugu fiican habka hoos u dhigista side-ka heerka toosan, laakiin sababtoo ah qaybinta goobta indhaha ayaa isku dul saaran mid aan isku mid ahayn ee gobolka hoos u dhaca, saameyntani waxay soo bandhigi doontaa qallooca heerka labaad ee aan tooska ahayn iyo ereyada qallooca isku-dhafka heerka saddexaad, oo ay weheliso saameynta nuugista side-ka ee iftiinka, taas oo horseedi doonta hoos u dhaca mugga isbeddelka indhaha iyo qallooca calaamadaha.

Modulator-ka InP wuxuu leeyahay saameyn elektro-oji ah oo heer sare ah, qaab-dhismeedka ceelka quantum-ka ee lakabka badan lehna wuxuu xaqiijin karaa modulators-ka danab wadista ee heerka sare ah iyo kuwa hooseeya oo leh Vπ·L ilaa 0.156V · mm. Si kastaba ha ahaatee, kala duwanaanshaha tusmada refractive-ka ee leh garoonka korontada waxaa ku jira ereyo toosan iyo kuwa aan toosanayn, kororka xoogga goobta korontada ayaa ka dhigi doona saameynta heerka labaad mid muuqata. Sidaa darteed, modulators-ka elektaroonigga ah ee silicon iyo InP waxay u baahan yihiin inay adeegsadaan eex si ay u sameeyaan isgoyska pn marka ay shaqeeyaan, isgoyska pn wuxuu keeni doonaa luminta nuugista iftiinka. Si kastaba ha ahaatee, cabbirka modulator-ka ee labadan waa yar yahay, cabbirka modulator-ka ganacsiga ee InP waa 1/4 ee modulator-ka LN. Waxtarka modulator-ka sare, oo ku habboon cufnaanta sare iyo shabakadaha gudbinta indhaha ee dhijitaalka ah ee masaafada gaaban sida xarumaha xogta. Saamaynta electro-ojikada ee lithium niobate ma laha hab nuugista iftiinka iyo khasaaro yar, taas oo ku habboon masaafada dheer ee isku xiran.isgaarsiinta indhahaoo leh awood weyn iyo heer sare. Codsiga sawirka microwave-ka, isku-dhafka elektaroonigga ah ee Si iyo InP waa kuwo aan toosnayn, taas oo aan ku habboonayn nidaamka sawirka microwave-ka kaas oo raacaya toosanaanta sare iyo dhaqdhaqaaqa weyn. Walxaha lithium niobate aad bay ugu habboon yihiin codsiga sawirka microwave-ka sababtoo ah isku-dhafka qaabaynta elektaroonigga ah ee gebi ahaanba toosan.