Badeecadaha

  • Rof Electro-optical Intensity Modulator filim khafiif ah oo lithium niobate modulator ah 25G TFLN modulator

    Rof Electro-optical Intensity Modulator filim khafiif ah oo lithium niobate modulator ah 25G TFLN modulator

    Qalabka 25G TFLN modulator, oo ah nooca khafiifka ah ee lithium niobate intensity modulator waa qalab beddelka elektaroonigga ah oo waxqabad sare leh, kaas oo ay si madax-bannaan u samaysay shirkaddayadu isla markaana leh xuquuq hanti-garaad oo madax-bannaan oo dhammaystiran. Badeecada waxaa lagu soo duubay tignoolajiyada isku-xidhka saxda ah si loo gaaro hufnaanta beddelka elektaroonigga ah ee aadka u sarreeya. Marka la barbar dhigo qalabka caadiga ah ee lithium niobate kristal modulator, badeecadani waxay leedahay astaamo ah danab nus-hir hoose, xasillooni sare, cabbir yar oo qalab ah iyo xakamaynta eexda kulaylka-optic, waxaana si weyn loogu isticmaali karaa isgaarsiinta indhaha ee dijitaalka ah, microwave photonics, shabakadaha isgaarsiinta laf-dhabarta iyo mashaariicda cilmi-baarista isgaarsiinta.

  • Laser-ka semiconductor-ka Rof 1550nm Module-ka laysarka xasilinta soo noqnoqoshada xariiqda cidhiidhiga ah

    Laser-ka semiconductor-ka Rof 1550nm Module-ka laysarka xasilinta soo noqnoqoshada xariiqda cidhiidhiga ah

    Module-ka leysarka semiconductor-ka ee taxanaha sawir-gacmeedka ee micro-source source line cidhiidhsan, oo leh ballaca xariiqda aadka u cidhiidhi ah, buuqa RIN ee aadka u hooseeya, xasilloonida soo noqnoqoshada aadka u fiican iyo isku halaynta, ayaa si weyn loogu isticmaalaa dareemayaasha fiber-ka indhaha iyo nidaamyada ogaanshaha (DTS, DVS, DAS, iwm.)

     

  • Taxanaha Rof-QPD APD/PIN Sawir-qaadaha Qalabka ogaanshaha sawir-qaadaha afar-geesoodka ah Qaybta sawir-qaadaha afar-geesoodka ah Qaybta sawir-qaadaha afar-geesoodka ah

    Taxanaha Rof-QPD APD/PIN Sawir-qaadaha Qalabka ogaanshaha sawir-qaadaha afar-geesoodka ah Qaybta sawir-qaadaha afar-geesoodka ah Qaybta sawir-qaadaha afar-geesoodka ah

    Module-ka sawir-qaadaha taxanaha afar-geesoodka ah ee ROF-QPD wuxuu qaataa sawirrada afar-geesoodka ah ee la soo dhoofiyay waxaana si gaar ah loogu talagalay wareegyada wadista iyo wareegyada kor u qaadista buuqa yar. Inta badan waxaa loo isticmaalaa cabbirka booska shucaaca iyo cabbirka xagasha saxda ah, iyadoo hirarka jawaab celinta ay daboolayaan 400-1700nm (400-1100nm / 800-1700nm). Waxa kale oo si weyn loogu isticmaalaa meelaha sida isgaarsiinta laysarka/laysarka iyo hagitaanka laysarka.

  • Rof Electro Optical Modulator 1064nm Eo modulator LiNbO3 modulator 2G

    Rof Electro Optical Modulator 1064nm Eo modulator LiNbO3 modulator 2G

    Qalabka wax ka beddela wejiga LiNbO3 waxaa si weyn loogu isticmaalaa nidaamka isgaarsiinta indhaha ee xawaaraha sare leh, dareemaha laysarka iyo nidaamyada ROF sababtoo ah saameynta wanaagsan ee elektaroonigga ah. Taxanaha R-PM oo ku salaysan tignoolajiyada Ti-diffused iyo APE, wuxuu leeyahay astaamo jireed iyo kiimiko oo deggan, kuwaas oo buuxin kara shuruudaha ugu badan ee codsiyada tijaabooyinka shaybaarka iyo nidaamyada warshadaha.

  • Rof Electro-optic modulator Eo modulator 300MHz 1064nm LiNbO3 marxaladda modulator

    Rof Electro-optic modulator Eo modulator 300MHz 1064nm LiNbO3 marxaladda modulator

    Qalabka wax ka beddela wejiga LiNbO3 waxaa si weyn loogu isticmaalaa nidaamka isgaarsiinta indhaha ee xawaaraha sare leh, dareemaha laysarka iyo nidaamyada ROF sababtoo ah saameynta wanaagsan ee elektaroonigga ah. Taxanaha R-PM oo ku salaysan tignoolajiyada Ti-diffused iyo APE, wuxuu leeyahay astaamo jireed iyo kiimiko oo deggan, kuwaas oo buuxin kara shuruudaha ugu badan ee codsiyada tijaabooyinka shaybaarka iyo nidaamyada warshadaha.

  • Modulator-ka indhaha ee Rof 780nm electro optic Modulator-ka wejiga 10G EO modulator-ka

    Modulator-ka indhaha ee Rof 780nm electro optic Modulator-ka wejiga 10G EO modulator-ka

    Qalabka ROF-PM ee taxanaha 780nm lithium niobate electro-optic modulator wuxuu qaataa tignoolajiyada isdhaafsiga proton ee horumarsan, oo leh luminta gelinta hoose, baaxadda modulation-ka sare, danab nus-hir hoose oo astaamo kale ah, oo inta badan loo isticmaalo nidaamka isgaarsiinta indhaha ee hawada sare, tixraaca waqtiga atomiga cesium, ballaarinta muuqaalka, interferometry, iyo meelaha kale.

  • Rof Electro-optic modulator 850nm Wajiga Modulator 10G

    Rof Electro-optic modulator 850nm Wajiga Modulator 10G

    Qalabka wax ka beddela wejiga LiNbO3 waxaa si weyn loogu isticmaalaa nidaamka isgaarsiinta indhaha ee xawaaraha sare leh, dareemaha laysarka iyo nidaamyada ROF sababtoo ah saameynta wanaagsan ee elektaroonigga ah. Taxanaha R-PM oo ku salaysan tignoolajiyada Ti-diffused iyo APE, wuxuu leeyahay astaamo jireed iyo kiimiko oo deggan, kuwaas oo buuxin kara shuruudaha ugu badan ee codsiyada tijaabooyinka shaybaarka iyo nidaamyada warshadaha.

  • Rof Electro-optic modulator 1550nm Wajiga Modulator 10G linbo3 modulator

    Rof Electro-optic modulator 1550nm Wajiga Modulator 10G linbo3 modulator

    Qalabka LiNbO3 (modulator-ka wajiga (linbo3 modulator) waxaa si weyn loogu isticmaalaa nidaamka isgaarsiinta indhaha ee xawaaraha sare leh, dareemaha laysarka iyo nidaamyada ROF sababtoo ah saameynta wanaagsan ee elektaroonigga ah. Taxanaha R-PM oo ku salaysan tignoolajiyada Ti-diffused iyo APE, wuxuu leeyahay astaamo jireed iyo kiimiko oo deggan, kuwaas oo buuxin kara shuruudaha ugu badan ee codsiyada tijaabooyinka shaybaarka iyo nidaamyada warshadaha.

  • Rof Electro-optic modulator 1550nm Wajiga Modulator 40G lithium niobate modulator

    Rof Electro-optic modulator 1550nm Wajiga Modulator 40G lithium niobate modulator

    Qalabka elektaroonigga ah ee Lithium niobate (lithium niobate modulator) oo ku salaysan habka faafinta titanium wuxuu leeyahay astaamaha luminta gelinta hoose, baaxadda isbeddelka sare, danab badh-hir hoose, awoodda indhaha ee waxyeellada badan, iwm. Waxaa inta badan loo isticmaalaa goobaha xakamaynta chirp-ka ee nidaamyada isgaarsiinta indhaha ee xawaaraha sare leh, isbeddelka wejiga ee nidaamyada isgaarsiinta isku dhafan, soo saarista qaybaha dhinaca ee nidaamyada ROF, iyo yaraynta kala firdhinta Brillouin (SBS) ee kicisa nidaamyada isgaarsiinta fiber-ka indhaha ee analogga ah.

  • Rof Electro-optic modulator 1064nm Eo modulator marxaladda modulator 10G

    Rof Electro-optic modulator 1064nm Eo modulator marxaladda modulator 10G

    Qalabka wax ka beddela wejiga LiNbO3 waxaa si weyn loogu isticmaalaa nidaamka isgaarsiinta indhaha ee xawaaraha sare leh, dareemaha laysarka iyo nidaamyada ROF sababtoo ah saameynta elektaroonigga ee wanaagsan. Taxanaha R-PM oo ku salaysan Ti-diffused iyo APE.

    Tiknoolajiyadda, waxay leedahay astaamo jireed iyo kiimiko oo deggan, kuwaas oo buuxin kara shuruudaha ugu badan ee codsiyada tijaabooyinka shaybaarka iyo nidaamyada warshadaha.

  • modulator ROF EOM Electro Optical modulator phase Low-Vpi

    modulator ROF EOM Electro Optical modulator phase Low-Vpi

    Taxanaha ROF-PM-UV modulator-ka heerka hoose ee Vpi wuxuu leeyahay danab nus-hir hoose (2.5V), luminta gelinta hoose, baaxadda sare, astaamaha waxyeelada sare ee awoodda indhaha, jajabka nidaamka isgaarsiinta indhaha ee xawaaraha sare leh waxaa inta badan loo isticmaalaa xakamaynta iftiinka, isbeddelka wejiga ee nidaamka isgaarsiinta isku xiran, nidaamka ROF ee dhinaca iyo yaraynta jilitaanka nidaamka isgaarsiinta fiber-ka indhaha ee Brisbane oo si qoto dheer u kiciyay kala firdhinta (SBS), iwm.

  • Qalabka Rof Electro-optic LiNbO3 MIOC Taxanaha Y-Waveguide Modulator

    Qalabka Rof Electro-optic LiNbO3 MIOC Taxanaha Y-Waveguide Modulator

    Modulator-ka R-MIOC Taxanaha Y-Waveguide waa wareeg isku-dhafan oo isku-dhafan oo LiNbO3 ah (LiNbO3 MIOC) oo ku salaysan tignoolajiyada microelectronic, kaas oo gaari kara polarizer iyo analyzer, kala-goynta iyo isku-darka iftiinka, isbeddelka wejiga iyo shaqo kale. Hagaha hirarka iyo elektroodhka waxaa lagu sameeyay chip-ka LiNbO3, fiilooyinka wax soo saarka iyo soo-gelinta si sax ah ayaa loogu xiraa hagaha hirarka, ka dibna chip-ka oo dhan waxaa lagu duubay guri Kovar ah oo dahab lagu dahaadhay si loo helo waxqabad ceel iyo isku hallayn sare.