Saamaynta diode-ka carbide-ka silicon ee awoodda sare lehSawir-qaade PIN ah
Diode PIN carbide oo awood sare leh ayaa had iyo jeer ahaa mid ka mid ah meelaha ugu daran ee cilmi-baarista qalabka korontada. Diode PIN waa diode crystal ah oo lagu sameeyay lakab semiconductor gudaha ah (ama semiconductor oo leh uruurinta wasakhda oo yar) oo u dhexeeya gobolka P+ iyo gobolka n+. I ee PIN waa soo gaabin Ingiriisi ah oo loogu talagalay macnaha "gudaha", sababtoo ah ma suurtowdo in la helo semiconductor saafi ah oo aan lahayn wasakh, sidaa darteed lakabka I ee diode PIN ee codsiga waxaa si badan ama ka yar loogu qasay xaddi yar oo wasakh P-nooc ama N-nooc ah. Waqtigan xaadirka ah, diode PIN carbide ee silicon wuxuu inta badan qaataa qaab-dhismeedka Mesa iyo qaab-dhismeedka diyaaradda.
Marka inta jeer ee hawlgalka ee diode PIN uu ka bato 100MHz, sababtoo ah saameynta kaydinta ee dhowr sideyaal iyo saameynta waqtiga transit ee lakabka I, diode-ku wuxuu lumiyaa saameynta sixitaanka wuxuuna noqdaa curiye is-hortaagan, qiimaha is-hortaagana wuu isbeddelaa iyadoo la adeegsanayo danabka is-hortaagan. Marka eber eex ama DC eex dib u laabasho ah, is-hortaaga gobolka I aad buu u sarreeyaa. Marka DC hore u janjeerto, gobolka I wuxuu soo bandhigaa xaalad is-hortaag hoose ah sababtoo ah duritaanka side. Sidaa darteed, diode-ka PIN waxaa loo isticmaali karaa sidii curiye is-hortaagan oo isbeddelaya, marka la eego microwave-ka iyo xakamaynta RF, badanaa waa lagama maarmaan in la isticmaalo aaladaha beddelka si loo gaaro beddelka calaamadda, gaar ahaan xarumaha xakamaynta calaamadaha ee soo noqnoqda sare, diode-ka PIN waxay leeyihiin awoodo xakameyn calaamad RF oo heer sare ah, laakiin sidoo kale si ballaaran ayaa loogu isticmaalaa wareegga wejiga, isbeddelka, xaddidaadda iyo wareegyada kale.
Diode-ka carbide-ka silicon-ka ee awoodda sare leh ayaa si weyn loogu isticmaalaa goobta korontada sababtoo ah astaamaha iska caabbinta danabka ee sarreeya, oo inta badan loo isticmaalo tuubo hagaajineed oo awood sare leh.PIN diode-kawaxay leedahay danab jabin heer sare ah oo VB ah, sababtoo ah lakabka doping-ka ee hooseeya ee dhexe oo sita hoos u dhaca danabka ugu weyn. Kordhinta dhumucda aagga I iyo yaraynta isku-darka doping-ka aagga Waxaan si wax ku ool ah u hagaajin karaa danabka jabitaanka ee diode-ka PIN, laakiin joogitaanka aagga I wuxuu hagaajin doonaa hoos u dhaca danabka hore ee VF ee qalabka oo dhan iyo waqtiga beddelka qalabka ilaa xad gaar ah, diode-ka laga sameeyay walxaha carbide-ka silicon wuxuu buuxin karaa cilladahan. Carbide-ka Silicon 10 jeer oo ka mid ah goobta korantada ee jabitaanka muhiimka ah ee silicon, si dhumucda aagga carbide-ka silicon ee diode-ka I loo dhimi karo toban meelood meel tuubada silicon, iyadoo la ilaalinayo danab jabin sare, oo ay weheliso hufnaanta kulaylka wanaagsan ee walxaha carbide-ka silicon, ma jiri doonto dhibaatooyin gubasho kuleyl oo muuqda, sidaa darteed diode-ka carbide-ka silicon-ka ee awoodda sare leh wuxuu noqday qalab aad muhiim u ah oo hagaajiya qalabka elektaroonigga casriga ah ee awoodda leh.
Sababtoo ah qulqulka daadashada ee aadka u yar iyo dhaqdhaqaaqa side-ka oo sarreeya, diode-yada silikoon carbide waxay leeyihiin soo jiidasho weyn oo ku saabsan ogaanshaha sawir-qaadista. Daadashada yar waxay yareyn kartaa socodka mugdiga ah ee side-ka waxayna yareyn kartaa buuqa; Dhaqdhaqaaqa side-ka oo sarreeya wuxuu si wax ku ool ah u hagaajin karaa xasaasiyadda silikoon carbideQalabka ogaanshaha PIN-ka(PIN Photodetector). Astaamaha awoodda sare leh ee diode-yada carbide-ka ee silicon waxay awood u siinayaan dareemayaasha PIN-ka inay ogaadaan ilo iftiin oo xooggan waxaana si weyn loogu isticmaalaa goobta hawada sare. Diode-yada carbide-ka ee silicon-ka ee awoodda sare leh ayaa fiiro gaar ah loo siiyay sababtoo ah astaamohooda aadka u wanaagsan, cilmi-baaristoodana si weyn ayaa loo horumariyay.
Waqtiga boostada: Oktoobar-13-2023